IR21141SSPBF【PDF 16/33 页】IC DRVR HALF BRIDGE 600V 24-SSOP

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IR2114/IR2214SSPbF

? Charge required by the internal level shifters

2 Sizing Tips

2.1 Bootstrap Supply

The V BS voltage provides the supply to the high side

driver circuitry of the gate driver. This supply sits on top

of the V S voltage and so it must be floating. The

bootstrap method is used to generate the V BS supply

and can be used with any of the IR211(4,41)/

IR221(4,41) drivers. The bootstrap supply is formed by

a diode and a capacitor as connected in Fig. 19.

( Q LS ); typical 20 nC,

? Bootstrap capacitor leakage current ( I LK_CAP ),

? High side on time ( T HON ).

I LK_CAP is only relevant when using an electrolytic

capacitor and can be ignored if other types of

capacitors are used. It is strongly recommend using at

least one low ESR ceramic capacitor (paralleling

electrolytic and low ESR ceramic may result in an

efficient solution).

bootstrap

resistor

R boot

bootstrap

diode

V F

DC+

Then we have:

Q TOT = Q G + Q LS + ( I LK _ GE + I QBS +

V CC

VCC

HOP

HON

V BS

bootstrap

capacitor

V GE

I LOAD

motor

+ I LK + I LK _ DIODE + I LK _ CAP + I DS ? ) ? T HON

The minimum size of bootstrap capacitor is:

SSDH

V CEon

V FP

C BOOT min =

Q TOT

? V BS

COM

Figure 19: Bootstrap Supply Schematic

An example follows using IR2214SS or IR22141SS:

a) using a 25 A @ 125 °C 1200 V IGBT

(IRGP30B120KD):

This method has the advantage of being simple and low

cost but may force some limitations on duty-cycle and

on-time since they are limited by the requirement to

refresh the charge in the bootstrap capacitor. Proper

capacitor choice can reduce drastically these

limitations.

2.2 Bootstrap Capacitor Sizing

To size the bootstrap capacitor, the first step is to

establish the minimum voltage drop ( ? V BS ) that we

I QBS = 800 μA (datasheet IR2214);

I LK = 50 μA (see Static Electrical Characteristics);

Q LS = 20 nC

Q G = 160 nC (datasheet IRGP30B120KD);

I LK_GE = 100 nA (datasheet IRGP30B120KD);

I LK_DIODE = 100 μA (reverse recovery <100 ns);

I LK_CAP = 0 (neglected for ceramic capacitor);

I DS- = 150 μA (see Static Electrical Characteristics);

T HON = 100 μs.

have to guarantee when the high side IGBT is on.

And:

If V GEmin is the minimum gate emitter voltage we want

to maintain, the voltage drop must be:

? V BS ≤ V CC ? V F ? V GE min ? V CEon

V CC = 15 V

V F = 1 V

V CEonmax = 3.1 V

V GEmin = 10.5 V

under the condition,

V GE min > V BSUV ?

where V CC is the IC voltage supply, V F is bootstrap

diode forward voltage, V CEon is emitter-collector voltage

of low side IGBT, and V BSUV- is the high-side supply

undervoltage negative going threshold.

the maximum voltage drop ? V BS becomes

? V BS ≤ V CC ? V F ? V GE min ? V CEon =

And the bootstrap capacitor is:

Now we must consider the

influencing

factors

contributing V BS to decrease:

? IGBT turn on required gate charge ( Q G ),

C BOOT ≥

290 nC

0 . 4 V

= 725 nF

? IGBT gate-source leakage current ( I LK_GE ),

? Floating section quiescent current ( I QBS ),

? Floating section leakage current ( I LK ),

? Bootstrap diode leakage current ( I LK_DIODE ),

? Desat diode bias when on ( I DS ),

www.irf.com

NOTICE: V CC has been chosen to be 15 V. Some

IGBTs may require a higher supply to work correctly

with the bootstrap technique. Also V CC variations

must be accounted in the above formulas.

? 2009 International Rectifier

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